Yeni Nesil Yüksek Güçlü IGBT’ler İçin Dinamik Modelleme ve Deneysel Doğrulama

Bu çalışmada, karakterize edilmiş IGBT dinamik modelleme yapılmıştır. Bu dinamik modelleme için IGBT bilgi dokümanı kullanılmıştır. Kurulan model IGBT çift darbe test devresinde denenmiştir. Sonuçlar deneysel çalışmalarla karşılaştırılmıştır. Bu çalışmanın temel amacı yüksek güçlü çeviricilerle yapılan benzetim çalışmalarında sonuçların özellikle iletim ve kesime geçiş anlarında gerçeğe yakın olmasını sağlamaktır. Yine IGBT kapı sürme devresi tasarım aşamasında da model, algoritmanın benzetim ortamında geliştirilmesi esnasında fayda sağlayacaktır. Benzetimlerde ANSYS Simplorer programı kullanılmıştır. Modelleme için yeni nesil yüksek güçlü IGBT modülü olan MBM450FS33F model Hitachi marka IGBT seçilmiştir. Bu ürün yeni paket çift IGBT’li modül olup yüksek güç yoğunluğu, düşük endüktans ve kolay paralellenebilir özellikleriyle yüksek güçlü çeviricilerde tercih edilmektedir. Deneysel sonuçlar kurulan çift darbe test düzeneği üzerinden alınmıştır. Benzetim ve deneysel çalışmalar arasındaki farklar grafik ve çizelgelerle verilmiş, program üzerinde yapılan IGBT modelin gerçek modül ile yakınlığı anahtarlama enerjisi hesaplamaları ile de kontrol edilmiştir. Sonuçlar kurulan modelin gerçeğe yakın olduğunu, bu modelin kullanıldığı sistem benzetimlerinde uygulanabilir olduğunu göstermiştir.

Anahtar Kelimeler:

IGBT modelleme, IGBT kayıpları, yüksek güçlü IGBT, çift darbe testi, model doğrulama

Dynamic Modelling and Experimental Validation of New Generation High Power IGBTs

In this paper, IGBT dynamic model is characterized by the circuit simulation tool. IGBT datasheet is used for the details need to built dynamic model. After that, the model is used in the double pulse test circuit simulation. And the results compared with the real test results. Main idea of this research is to have an IGBT dynamic model as close as possible to real one in order to use the model in the gate drive design simulations. A software tool of Ansys Simplorer is used for the simulations and the IGBT that is used for the research is MBM450FS33F. This is the new packaging generation high voltage dual IGBT that has the feature of high power density, low inductance and easy paralleling for the converter applications. Experimental test measurements are also performed with double pulse test setup. The comparison of the simulation and the experiment results for both voltage and current waveforms, especially peak values and the turn off and turn on energy losses are given in detail. The results are shown that the dynamic IGBT model that is built can be used for the system simulations. It achieves an acceptable accuracy considering the compared results

Keywords:

IGBT modelling, IGBT losses, High power IGBT, Double pulse test, Model verification,

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