MOCVD ile büyütülen GaN p-i-n yapısındaki sarı ışık merkezinin elektro-optik ölçümlerle incelenmesi

Bu çalışmada, metal organik buhar fazlı epitaksi ile üretilmiş GaN p-i-n yapı, elektrolüminesans (EL) ve sıcaklığa akım-gerilim ölçümleriyle incelenmiştir. GaN p-i-n yapının, düz besleme geriliminde uzay yükü sınırlamalı bölgeye karşılık gelen 50 mA enjeksiyon akımı altında, tepe noktası 2.2 eV enerjisinde olan sarı ışık yaydığı gözlenmiştir. Ayrıca, uzay yükü sınırlamalı bölgeden türetilen mobilitenin, elektrik alan bağlılığının Poole-Frenkel türünde olduğu saptanmış ve termal enerji aralığı 0.299 eV olarak hesaplanmıştır. Hesaplanan bu enerji aralığı, EL ölçümünden elde edilen sonuçlarla desteklenmiştir.

Anahtar Kelimeler:

GaN, p-i-n yapı, elektrolüminesans, akım-gerilim karakterizasyonu, mobilite

Investigation of the yellow light center in GaN p-i-n structure grown by MOCVD with electro-optical measurements

In this study, GaN p-i-n structure grown by metal-organic vapor phase epitaxy was investigated by temperature-dependent current-voltage and electroluminescence (EL) measurements. It has been observed that the GaN p-i-n structure emits yellow light with a peak energy of 2.2 eV under 50 mA injection current corresponding to the space charge limited region at forward voltage. In addition, the electric field dependence of the mobility derived from the space-charged region was determined to be Poole-Frenkel and the thermal energy gap was calculated as 0.299 eV. This calculated energy range was supported by the results obtained from the EL measurement.

Keywords:

GaN, p-i-n structure, electroluminescence, current-voltage characterization, mobility,

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