Metal ve Yarıiletken Arasındaki Yalıtkan Tabakanın Elektriksel karakterizasyon Etkisi

Metal-yalıtkan-yarıiletken (MIS) aygıtlar elektronik ve optoelektronikteki önemlerindendolayı çalışılmaktadır. Bu önem aygıtların yüksek dielektrik sabitine, depolama tabakası ve kapasitansözelliklerine sahip olmalarından kaynaklanmaktadır. Bu yüzden Si3N4 tabakası p-tipi Si üzerinePECVD tekniği kullanılarak büyütülmüş, kalınlığı elipsometre ile 5 nm olarak ölçülmüştür ve Alkontak sayesinde MIS yapısı elde edilmiştir. Elde edilen Al/p-Si yapısı üzerine Si3N4 tabakasının etkisiaraştırılmıştır. Bunun için aygıtın elektrik karakterizasyonları ileri ve ters beslem I-V, C–V ve G-Völçümleriyle yapılmış ve yalıtkan Si3N4 tabakanın diyot özelliklerini oldukça etkilediği görülmüştür. Arayüzey halleri (Nss), seri direnç (Rs) ve diğer bazı elektriksel parametrelerin aygıt üzerine etkileri I-Vve C–V ölçümlerinden hesaplanarak araştırılmıştır. C-V ölçümlerinden aygıtın memristör bir yapı gibidavrandığı tespit edilmiştir

Anahtar Kelimeler:

Al/Si 3N4/p-Si, kapasitör özelliği, metal-yalıtkan-yarıiletken yapılar, Schottky diyot

The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal

Metal-Insulator-semiconductor contacts (MIS) have been studied its importance inelectronic and optoelectronic. Their importance comes from its so high dielectric constant, storage layerproperty and effect of capacitance. For this reason, Si3N4 were deposited with PECVD technique onp-type Si about 5 nm thickness layers. The thicknesses of Si3N4 were measured with an elipsometre andobtained MIS contact with Al contact. It was researched the insulator layer effect on the Al/p-Si contact.Its electrical characterizations were inquired by use of the forward and reverse bias I-V, C–V and G-Vmeasurements and were seen that the insulator Si3N4 layer inﬂuenced characterizations of the contact.Effect of the interface states (Nss), the series resistance (Rs) and the other some electrical parameterswere investigated by calculating from I-V and C–V measurements. It was observed that from the C-Vcharacterizations at 500 kHz dual, contact behaved similarly memristor structure.

Keywords:

Al/Si3N4/p-Si, capacitance behavior, metal-insulator-semiconductor structure, Schottky diode,

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