DÖRT TON KÜÇÜK İŞARET GİRİŞLİ GaN HEMT TRANSİSTÖRÜN FARKLI SICAKLIKLARDAKİ ASİMETRİK GENLİK DEĞİŞİMİ

Bu çalışmada, GaN HEMT transistörün sıcaklığa bağlı analizi yapılarak Volterra güç serisi üçüncü dereceyekadar açılmış ve küçük işaret transfer fonksiyonları (H1, H2, H3) elde edilmiştir. Birinci çekirdek küçük işarettransfer fonksiyonu (H1) kullanılarak 100K, 300K ve 600K sıcaklık değerlerinde dört-tonlu küçük işaretgirişinden elde edilen intermodülasyon (IMD) frekans bileşenleri, geçit-kaynak (Gate source, Vgs) geriliminebağlı olarak analiz edilmiştir. Çalışmada IMD frekans bileşenleri iki grupta irdelenmiş; birinci grup bileşenler (1-6) ve ikinci grup bileşenler ise (7-17) olarak alınmış ve gruplar arası ve grup içi asimetrik genlik değişimi, kritikfrekans bölgesi, bant genişliği ve IMD haberleşme de değerlendirilmiştir.

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